Title :
Comments on "Thermal resistance calculation of AlGaN-GaN devices"
Author_Institution :
Temasek Labs., Nat. Univ. of Singapore, Singapore
Abstract :
For original paper see Dawish et al. (IEEE Trans. Microw. Theory Tech., vol. 52, no.11, p.2611-20, 2004 November).
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; numerical analysis; thermal resistance; wide band gap semiconductors; AlGaN-GaN; channel temperature; numerical verification; power handling capability; semiconductor field effect transistors; thermal resistance calculation; Aluminum gallium nitride; Equations; FETs; Finite element methods; Gallium nitride; Notice of Violation; Silicon carbide; Substrates; Temperature; Thermal resistance; AlGaN–GaN; thermal resistance calculation;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2005.854219
