Title :
Authors´ reply [to comments on ´Thermal resistance calculation of AlGaN-GaN devices´]
Author :
Darwish, Ali M. ; Bayba, Andrew ; Hung, H. Alfred
Author_Institution :
Army Res. Lab., Adelphi, MD, USA
Abstract :
The present authors reply to the comment by Yin (IEEE Trans. Microw. Theory Tech., vol.53, no.9, p. 3050-2, 2005 September) on the original paper by Darwish et al. (IEEE Trans. Microw. Theory Tech., vol.52, no.11, p.2611-20, 2004 November).
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; thermal resistance; wide band gap semiconductors; AlGaN-GaN devices; channel temperature; thermal resistance; Biological tissues; Coaxial components; Dielectrics; Electrochemical impedance spectroscopy; Gallium nitride; Immune system; In vivo; Probes; Temperature; Thermal resistance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2005.854215
