A silicon bipolar 4-bit 1-Gsample/s full Nyquist A/D converter

Author

Daniel, Detlef ; Langmann, Ulrich ; Bosch, Berthold G.

Author_Institution

Inst. fuer Elektronik, Ruhr-Univ. Bochum, West Germany

Volume

23

Issue

3

fYear

1988

fDate

6/1/1988 12:00:00 AM

Firstpage

742

Lastpage

749

Abstract

A four-bit silicon bipolar analog-to-digital converter (ADC) which is operational at the full Nyquist input frequency up to 1 Gsample/s (Gs/s) is discussed. The effective bit number at 1 Gs/s reduces to 3.5 bits on Nyquist conditions. The 3-dB large-signal analog bandwidth is 800 MHz and the maximum sampling rate reaches 2 Gs/s and beyond. The converter is built up by stacking of two three-bit subcircuits. The ADC architecture relies on a balanced structure mixing conventional flash-converter elements with analog encoding. Total power consumption is 2.4 W. Standard silicon bipolar technology is used without self-alignment.<>

Keywords

analogue-digital conversion; bipolar integrated circuits; elemental semiconductors; integrated circuit technology; silicon; 2.4 W; 4 bits; 800 MHz; ADC; Nyquist conditions; Si; analog encoding; analog-to-digital converter; mixing conventional flash-converter elements; power consumption; sampling rate; semiconductor; Analog-digital conversion; Circuits; Encoding; Frequency conversion; Gallium arsenide; Optical fiber communication; Signal resolution; Silicon; Stacking; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.314

Filename

314