Title :
An inductance enhancement technique and its application to a shunt-peaked 2.5 Gb/s transimpedance amplifier design
Author :
Oh, Yong-Hun ; Lee, Sang-Gug
Author_Institution :
Electr. Eng. Dept., Inf. & Commun. Univ., Daejeon, South Korea
Abstract :
This brief presents a bandwidth enhancement technique that is applicable to gigahertz-range broadband circuits. Using the inductance enhancement technique proposed in this brief, a 2.5-Gb/s transimpedance amplifier (TIA) has been implemented based on a 0.35-μm CMOS technology. With the input noise reduction, the TIA with the proposed active inductor loads improves the overall system performances including more that 90% increase in bandwidth. Measurements show the bandwidth of 1.73 GHz, transimpedance gain of 68 dBΩ, and the averaged input referred noise current of 3.3 pA/√Hz, respectively, while dissipating 50 mW of dc power.
Keywords :
CMOS analogue integrated circuits; inductors; integrated circuit design; wideband amplifiers; 0.35 micron; 1.73 GHz; 2.5 Gbits/s; 50 mW; CMOS technology; active inductor loads; bandwidth enhancement; bandwidth extension; inductance enhancement; shunt-peaked amplifier; transimpedance amplifier; Active inductors; Bandwidth; Broadband amplifiers; CMOS technology; Circuits; Current measurement; Gain measurement; Inductance; Noise reduction; Power measurement; 65; Active inductors; TIA; bandwidth extension; shunt-peaking; transimpedance amplifier;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2004.836883
