Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Author

Neogi, Arup ; Everitt, Henry ; Morkoç, Hadis ; Kuroda, Takamasa ; Tackeuchi, Atsushi

Author_Institution

Dept. of Phys., Duke Univ., Durham, NC, USA

Volume

2

Issue

1

fYear

2003

fDate

3/1/2003 12:00:00 AM

Firstpage

10

Lastpage

14

Abstract

Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.

Keywords

III-V semiconductors; electron-hole recombination; gallium compounds; molecular beam epitaxial growth; nanostructured materials; photoluminescence; self-assembly; semiconductor quantum dots; wide band gap semiconductors; 100 K; GaN; GaN quantum dots; MBE growth; PL decay time; carrier recombination dynamics; emission mechanism; enhanced radiative efficiency; molecular beam epitaxy; multiple period QDs; photoluminescence spectroscopy; self-assembled quantum dots; semiconductor nanostructures; single period QDs; time-resolved PL spectroscopy; Gallium nitride; Molecular beam epitaxial growth; Photoluminescence; Physics; Polarization; Potential well; Quantum dots; Radiative recombination; Temperature; US Department of Transportation;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2003.808513

Filename

1186771