Title :
Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy
Author :
Neogi, Arup ; Everitt, Henry ; Morkoç, Hadis ; Kuroda, Takamasa ; Tackeuchi, Atsushi
Author_Institution :
Dept. of Phys., Duke Univ., Durham, NC, USA
fDate :
3/1/2003 12:00:00 AM
Abstract :
Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.
Keywords :
III-V semiconductors; electron-hole recombination; gallium compounds; molecular beam epitaxial growth; nanostructured materials; photoluminescence; self-assembly; semiconductor quantum dots; wide band gap semiconductors; 100 K; GaN; GaN quantum dots; MBE growth; PL decay time; carrier recombination dynamics; emission mechanism; enhanced radiative efficiency; molecular beam epitaxy; multiple period QDs; photoluminescence spectroscopy; self-assembled quantum dots; semiconductor nanostructures; single period QDs; time-resolved PL spectroscopy; Gallium nitride; Molecular beam epitaxial growth; Photoluminescence; Physics; Polarization; Potential well; Quantum dots; Radiative recombination; Temperature; US Department of Transportation;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2003.808513
