Simulation of dry etch processes by COMPOSITE

Author

Pelka, Joachim ; Müller, K.P. ; Mader, Hermann

Author_Institution

Fraunhofer-Inst. fuer Mikrostrukturtech., Berlin, West Germany

Volume

7

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

154

Lastpage

159

Abstract

Anetch simulator that allows modeling of dry etch processes by means of rates, fitting functions, and models is presented. Isotropic etching by chemically active neutrals, sputtering by energetic ions, and anisotropic etching by ion-induced chemistry can be considered. The simulation of secondary effects such as redeposition and trenching as well as polymerization effects is possible. Some applications are presented to demonstrate the possibilities of the new program. This etch simulator is part of the process modeling program COMPOSITE, which is able to simulate the complete fabrication process of integrated circuits

Keywords

electronic engineering computing; integrated circuit technology; semiconductor technology; sputter etching; COMPOSITE; IC fabrication; anisotropic etching; chemically active neutrals; dry etch processes; energetic ions; etch simulator; ion-induced chemistry; isotropic etching; modeling; polymerization effects; process modeling program; redeposition; secondary effects; sputtering; trenching; Anisotropic magnetoresistance; Chemicals; Chemistry; Circuit simulation; Dry etching; Fabrication; Integrated circuit modeling; Polymers; Sputter etching; Sputtering;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.3144

Filename

3144