• DocumentCode
    1161774
  • Title

    Cryogenic RF switch using III-nitride MOSHFETs

  • Author

    Simin, G. ; Koudymov, Alexey ; Yang, Zengli ; Hu, Xiaonan ; Yang, Jian ; Shur, M. ; Gaska, R.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC
  • Volume
    45
  • Issue
    4
  • fYear
    2009
  • Firstpage
    207
  • Lastpage
    208
  • Abstract
    The cryogenic operation of a low-loss RF switch using a AlGaN/GaN metal-oxide semiconductor heterostructure field effect transistor is reported. At 77 K the channel resistance of the MOSHFET is three times lower and the contact resistance is 20% lower compared to room temperature. As a result, the performance of the MOSHFET RF switch at 77 K is even superior to that at room temperature.
  • Keywords
    III-V semiconductors; cryogenic electronics; electric resistance; field effect transistor switches; microwave switches; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; MOSHFET; channel resistance; cryogenic RF switch; low-loss RF switch; metal-oxide semiconductor heterostructure field effect transistor; temperature 77 K;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20092562
  • Filename
    4784310
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1161774