• DocumentCode
    1161948
  • Title

    DC characteristics of AZO/GaN heterojunction bipolar transistors

  • Author

    Pan, Ching-Tsai ; Hou, R.-J. ; Hsin, Yue-Ming ; Chiu, Hsien-Chin

  • Author_Institution
    Dept. of Electron. Eng., Nat. Central Univ., Taoyuan
  • Volume
    45
  • Issue
    4
  • fYear
    2009
  • Firstpage
    230
  • Lastpage
    231
  • Abstract
    A new npn Al-doped zinc oxide (AZO)/GaN heterojunction bipolar transistor (HBT) is presented. The fabricated HBT with an emitter size of 120times120 mum2 exhibits a current gain of 5.8 at V BE=3.0=V. The anomalous high current gain is observed at low current level due to the leakage current. The common-emitter output characteristics demonstrate DC current gain of 1.2. In addition, improved device characteristics are observed after the P2S5/(NH4)2S treatment.
  • Keywords
    III-V semiconductors; gallium compounds; heterojunction bipolar transistors; leakage currents; wide band gap semiconductors; DC characteristics; GaN-ZnO:Al; current gain; gain 5.8 dB; heterojunction bipolar transistors; leakage current; voltage 3.0 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20093076
  • Filename
    4784325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1161948