• DocumentCode
    1162008
  • Title

    A boundary element method for modeling viscoelastic flow in thermal oxidation

  • Author

    Tung, Thye-Lai ; Connor, Jerome ; Antoniadis, Dimitry A.

  • Author_Institution
    MIT, Cambridge, MA, USA
  • Volume
    7
  • Issue
    2
  • fYear
    1988
  • fDate
    2/1/1988 12:00:00 AM
  • Firstpage
    215
  • Lastpage
    224
  • Abstract
    At temperatures encountered in thermal oxidation, silicon dioxide flows viscoelastically, A reduced-dimension, generalized boundary element method for modeling such a problem has been developed. A modified Kelvin´s solution is used as the kernel; constant-velocity loading is chosen to operate with a wide range of stress relaxation times. Simulation results are reported for simple cases of focal oxidation
  • Keywords
    boundary-elements methods; elemental semiconductors; oxidation; silicon; viscoelasticity; Kelvin´s solution; Si; Si-SiO2; boundary element method; constant-velocity loading; focal oxidation; modeling; semiconductor; simulation; stress relaxation times; thermal oxidation; viscoelastic flow; Boundary element methods; Elasticity; History; Kelvin; Kernel; Oxidation; Shape; Silicon compounds; Stress; Temperature; Thermal stresses; Viscosity;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.3151
  • Filename
    3151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1162008