An improved two-dimensional simulation model (MEGA) for GaAs MESFET applicable to LSI design

Author

Hirose, Mayumi ; Yoshida, Jiro ; Toyoda, Nobuyuki

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

7

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

225

Lastpage

230

Abstract

The authors have developed a two-dimensional device simulator for GaAs MESFETs, based on the drift-diffusion current equation in which the actual device structure, including an ion-implanted layer, n⁺ source and drain geometry, and substrate with very low impurity concentration, is taken into account. The electron mobility is assumed to be a function of the electric field component parallel to the gradient of the quasi-Fermi level. This mobility model eliminates the discrepancy in the conventional absolute-field-value-dependent mobility model, which seriously underestimates the drain current. The calculated results show good agreement with experimental results, even for a device with submicron (0.7-μm) gate length. This confirms the effectiveness of using the present device simulator in the practical design of GaAs MESFET LSIs

Keywords

III-V semiconductors; Schottky gate field effect transistors; carrier mobility; gallium arsenide; large scale integration; semiconductor device models; 0.7 micron; GaAs; LSI design; MEGA; MESFETs; drain current; drift-diffusion current equation; electron mobility; quasi-Fermi level; submicron gate length; two-dimensional simulation model; Computational modeling; Electron mobility; Equations; Gallium arsenide; Geometry; Impurities; Large scale integration; Logic arrays; MESFETs; Predictive models; Solid modeling;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.3152

Filename

3152