Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate

Author

Vellas, N. ; Gaquiere, C. ; Minko, A. ; Hoel, Virginie ; De Jaeger, J.C. ; Cordier, Y. ; Semond, F.

Author_Institution

Dept. Hyperfrequences et Semiconducteurs, Inst. d´Electronique et de Microelectronique du Nord, Villeneuve d´Ascq, France

Volume

13

Issue

3

fYear

2003

fDate

3/1/2003 12:00:00 AM

Firstpage

99

Lastpage

101

Abstract

The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 × 50 × 0.5 μm² HEMT with a linear power gain of 16 dB. These results constitute the state of the art.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; microwave power transistors; semiconductor device measurement; 0.5 micron; 16 dB; 32 percent; 4 GHz; AlGaN-GaN; AlGaN/GaN; HEMTs; III V semiconductors; linear power gain; microwave frequencies; output power density; power added efficiency; power applications; pulsed measurement; Aluminum gallium nitride; Density measurement; Gain measurement; Gallium nitride; HEMTs; MODFETs; Microwave frequencies; Power generation; Power measurement; Silicon;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.810117

Filename

1187394