Title :
Improved HBT linearity with a "post-distortion"-type collector linearizer
Author :
Jeon, Yong-Joon ; Kim, Hyung-Wook ; Kim, Min-Seok ; Ahn, Young-Sik ; Kim, Jong-Won ; Choi, Ji-Youn ; Jung, Doo-Chan ; Shin, Jin-ho
Author_Institution :
Devices & Mater. Lab., LG Electron. Inst. of Technol., Seoul, South Korea
fDate :
3/1/2003 12:00:00 AM
Abstract :
An HBT amplifier with a "post-distortion"-type linearizer utilizing a base-collector junction diode shows more than 8-dB improvement of adjacent channel power ratio, and the collector linearizer comprising a reverse biased base-collector junction diode requires no additional dc power consumption and has no deterioration of RF performance. The linearization technique of post-distortion compensates the nonlinearity of HBTs, which arises from the C/sub bc/ variation due to a large-signal swing.
Keywords :
MMIC amplifiers; UHF amplifiers; UHF integrated circuits; bipolar MMIC; code division multiple access; compensation; mobile handsets; CDMA; HBT amplifier; RF amplifiers; adjacent channel power ratio; base-collector junction diode; large-signal swing; linearity; mobile communication systems; mobile phones; nonlinearity compensation; post-distortion-type collector linearizer; Diodes; Heterojunction bipolar transistors; Linearity; Linearization techniques; Multiaccess communication; Operational amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2003.810113
