Title :
InAlAs/InGaAs HBT X-band double-balanced upconverter
Author :
Kobayashi, Kevin W. ; Tran, Liem T. ; Bui, Stacey ; Oki, Aaron K. ; Streit, Dwight C. ; Rosen, Mark
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
10/1/1994 12:00:00 AM
Abstract :
We report on an InAlAs/InGaAs HBT Gilbert cell double-balanced mixer which upconverts a 3 GHz IF signal to an RF frequency of 5-12 GHz. The mixer cell achieves a conversion loss of between 0.8 dB and 2.6 dB from 5 to 12 GHz. The LO-RF and IF-RF isolations are better than 30 dB at an LO drive of +5 dBm across the RF band. A pre-distortion circuit is used to increase the linear input power range of the LO port to above +5 dBm. Discrete amplifiers designed for the IF and RF frequency ports make up the complete upconverter architecture which achieves a conversion gain of 40 dB for an RF output bandwidth of 10 GHz. The upconverter chip set fabricated with InAlAs/InGaAs HBT´s demonstrates the widest gain-bandwidth performance of a Gilbert cell based upconverter compared to previous GaAs and InP HBT or Si-bipolar IC´s
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; frequency convertors; gallium arsenide; heterojunction bipolar transistors; indium compounds; mixers (circuits); 0.8 to 2.6 dB; 10 GHz; 3 GHz; 40 dB; 5 to 12 GHz; Gilbert cell double-balanced mixer; HBT; InAlAs-InGaAs; SHF; X-band; double-balanced upconverter; gain-bandwidth performance; pre-distortion circuit; Circuits; Frequency conversion; Gain; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Mixers; RF signals; Radio frequency; Radiofrequency amplifiers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
