Title :
High-performance GaAs switch IC´s fabricated using MESFET´s with two kinds of pinch-off voltages and a symmetrical pattern configuration
Author :
Uda, Hisanori ; Yamada, Takashi ; Sawai, Tetsuro ; Nogawa, Kaoru ; Harada, Yasoo
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
fDate :
10/1/1994 12:00:00 AM
Abstract :
GaAs MESFET switch IC´s operating at low control voltages of 0/-3 V and +3/0 V have been developed for use in Personal Handy Phones using the 1.9 GHz band. The switch IC´s have excellent RF characteristics, and have no need for external circuit installation. The unique points of these IC´s are the use of GaAs MESFET´s with two kinds of pinch-off voltages and a symmetrical source and drain pattern configuration with respect to the gate. The 0/-3 V IC had low insertion loss of 0.55 dB and 0.65 dB, and high isolation of 31 dB and 24 dB at receiving and transmitting operations, respectively. The +3/0 V IC also had excellent characteristics such as insertion loss of 0.73 dB and 0.95 dB, and isolation of 27 dB and 23 dB, respectively. Both IC´s had an output power at 1 dB gain compression point of 25.4 dBm and 3rd order intercept point of more than 46 dBm
Keywords :
III-V semiconductors; MMIC; cordless telephone systems; field effect integrated circuits; gallium arsenide; personal communication networks; radio transmitters; radiotelephony; semiconductor switches; -3 to 3 V; 0.55 dB; 0.65 dB; 0.73 dB; 0.95 dB; 1.9 GHz; GaAs; GaAs switch ICs; MESFETs; MMIC switches; Personal Handy Phones; UHF band; control voltages; cordless telephone system; insertion loss; output power; pinch-off voltages; receiving operations; symmetrical pattern configuration; transmitting operations; Gallium arsenide; Insertion loss; Low voltage; MESFET integrated circuits; Propagation losses; Radio frequency; Radiofrequency integrated circuits; Switches; Switching circuits; Voltage control;
Journal_Title :
Solid-State Circuits, IEEE Journal of
