Photoelectricity property of micro device based on carbon nanotubes

Being direct band-gap materials, carbon nanotubes (CNTs) have a potential to be efficient optoelectronic detection material. In order to explore this potential application, a CNTs-based device is fabricated with micromachined techniques and depositing the CNTs on the substrate surface with CVD growth methods. The structure of the CNTs-based device is characterized with SEM picture. Normally CNTs forms a schottky barrier or metal contact with the metal electrodes. The photoelectronic properties of carbon nanotubes based device with different contact mode are measured and analysised. Experimental results show that the performance of CNT based micro device can be further improved by using asymmetric contacts.