A 5-GHz fully integrated full PMOS low-phase-noise LC VCO

Author

Astis, Giuseppe De ; Cordeau, David ; Paillot, Jean-Marie ; Dascalescu, Lucian

Author_Institution

RuSS, Ruvo Di Puglia, Italy

Volume

40

Issue

10

fYear

2005

Firstpage

2087

Lastpage

2091

Abstract

A 5-GHz fully integrated, full PMOS, low-phase-noise and low-power differential voltage-controlled oscillator (VCO) is presented. This circuit is implemented in a 0.35-μm four-metal BiCMOS SiGe process. At 2.7-V power supply voltage and a total power dissipation of only 13.5 mW, the proposed VCO features a worst case phase noise of -97 dBc/Hz and -117 dBc/Hz at 100 kHz and 1 MHz frequency offset, respectively. The oscillator is tuned from 5.13 to 5.68 GHz with a tuning voltage varying from 0 to 2.7 V.

Keywords

BiCMOS analogue integrated circuits; MOS integrated circuits; integrated circuit design; microwave oscillators; voltage-controlled oscillators; 0 to 2.7 V; 0.35 micron; 13.5 mW; 5 GHz; 5.13 to 5.68 GHz; BiCMOS; LC VCO; PMOS; frequency offset; phase noise; voltage controlled oscillator; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Phase noise; Power dissipation; Power supplies; Silicon germanium; Tuning; Voltage; Voltage-controlled oscillators; Cyclostationary noise; PMOS; design method; phase noise; symmetric center-tapped inductor; varactors; voltage-controlled oscillator (VCO);

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2005.854601

Filename

1506898