A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique

Author

Inoue, Yusuke ; Sato, M. ; Ohki, Toshihiro ; Makiyama, Kozo ; Takahashi, Tsuyoshi ; Shigematsu, Hisao ; Hirose, Tatsuya

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

40

Issue

10

fYear

2005

Firstpage

2098

Lastpage

2103

Abstract

We demonstrated a 90-GHz InP-HEMT lossy match amplifier (LMA) with a 20-dB gain for the first time. The power consumption was 220 mW, which is the smallest ever reported for a broadband amplifier with a bandwidth of over 80 GHz. The amplifier acts as a C-R coupled amplifier in the low to medium frequency range and as an L-C match amplifier at high frequencies. This configuration provides both high gain and wide bandwidth. The key to achieving a bandwidth of over 80 GHz is broadband matching in the L-C match amplifier. In this paper, we propose a broadband matching technique with a low-Q network and describe the design guideline we used to get excellent performance.

Keywords

III-V semiconductors; Q-factor; high electron mobility transistors; indium compounds; millimetre wave amplifiers; wideband amplifiers; 20 dB; 220 mW; 90 GHz; C-R coupled amplifier; HEMT; InP; L-C match amplifier; LMA; Q factor; broadband amplifier; broadband matching technique; lossy match amplifier; low-Q network; power consumption; Bandwidth; Broadband amplifiers; Circuits; Energy consumption; Frequency; Optical amplifiers; Optical fiber communication; Optical losses; Resistors; Topology; Broadband; Q factor; lossy match amplifier;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2005.854616

Filename

1506900