Title :
Line-to-ground capacitance calculation for VLSI: a comparison
Author_Institution :
Siemens AG, Munich, West Germany
fDate :
2/1/1988 12:00:00 AM
Abstract :
A comparison is made between various approximations of the line-to-ground capacitance problem in a VLSI environment. It is shown that with up-to-date dimensions, the simple parallel-plate model is no longer adequate. However, easy-to-use and fast-to-compute formulas exist that result in accurate and reliable capacitance values
Keywords :
VLSI; capacitance; circuit analysis computing; field effect integrated circuits; MOS technologies; VLSI; interconnection line; line-to-ground capacitance problem; Capacitance; Complexity theory; Dielectric constant; Electric potential; Finite difference methods; Helium; Integrated circuit interconnections; Parasitic capacitance; Poisson equations; Space charge; Very large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
