Amorphous Si/Si heterojunction microwave transistors

Author

Zhu, En-jun ; Zhang, S.S. ; Sheng, W.W. ; Zhao, B.Z. ; Xiong, C.K. ; Wang, Y.S.

Author_Institution

Inst. of Microelectron., Peking Univ., China

Volume

10

Issue

1

fYear

1989

Firstpage

4

Lastpage

6

Abstract

Because the emitter-base junctions of amorphous Si/Si heterojunction bipolar transistors (HBTs) with a conventional structure are inside the amorphous Si (a-Si) layer, their high-frequency performance is limited due to very low electron velocity in a-Si. An improved structure, the two-dimensional-electron-gas (2DEG) emitter structure, is proposed to overcome these problems, and a-Si/Si HBTs with good high-frequency performance are fabricated. Their low-temperature fabrication technology can be extended to other III-V-compound HBTs.<>

Keywords

amorphous semiconductors; elemental semiconductors; heterojunction bipolar transistors; silicon; solid-state microwave devices; 2DEG emitter structure; HBTs; amorphous Si-Si heterojunction microwave transistors; emitter-base junctions; high-frequency performance; low-temperature fabrication technology; two-dimensional-electron-gas; Amorphous materials; Crystalline materials; Crystallization; Cutoff frequency; Electron emission; Heterojunction bipolar transistors; III-V semiconductor materials; Microwave transistors; Silicon; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31663

Filename

31663