مرکز منطقه ای اطلاع رساني علوم و فناوري - Improvement of On–Off-Current Ratio in <formula formulatype="inline"> <img src="/images/tex/18845.gif" alt=" \\hbox {TiO}_{\\rm x}"> </formula> Active-Channel TFTs Using <formula formulatype="inline"> <img src="/images/tex/18846.gif" alt="\\hbox {N

Title :

Improvement of On–Off-Current Ratio in $\\hbox {TiO}_{\\rm x}$ Active-Channel TFTs Using $\\hbox {N</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Park, Jae-Woo ; Lee, Dongyun ; Kwon, Hakyoung ; Yoo, Seunghyup</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>30</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>4</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2009</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>4/1/2009 12:00:00 AM</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>362</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>364</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Without sacrificing the on-current in the transfer characteristics, we have successfully reduced the off-current part by the optimal N<sub>2</sub>O plasma treatment to improve the on-off-current ratio in n-type titanium oxide ( TiO<sub>x</sub>) active-channel thin-film transistors. While the high-power (275 W) N<sub>2</sub>O plasma treatment oxidizes the whole TiO<sub>x</sub> channel and results in the reduction of both on- and off-current, the optimized low-power (150 W) process makes the selective oxidation of the top portion in the channel and reduces only the off-current significantly. Increase in on-off ratio by almost five orders of magnitude is achieved without change in on-current by using the presented method.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>nitrogen compounds; plasma applications; thin film transistors; titanium compounds; N<sub>2</sub>O; TiO<sub>x</sub>; active-channel thin-film transistors; on-off-current ratio; optimized low-power process; plasma treatment; power 150 W; <formula formulatype=$ $hbox{N}_{2}hbox{O}$ plasma treatment; on–off-current ratio; plasma-enhanced atomic-layer deposition (PEALD); thin-film transistor (TFT); titanium oxide $( hbox{TiO}_{rm x})$;