Improvement of hardness of MOS capacitors to electron-beam irradiation and hot-electron injection by ultradry oxidation of silicon

Author

Haruta, Ryo ; Ohji, Yuzuru ; Nishioka, Yasushiro ; Yoshida, Ikuo ; Mukai, Kiichiro ; Sugano, Takuo

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

10

Issue

1

fYear

1989

Firstpage

27

Lastpage

29

Abstract

The sensitivity to electron-beam-induced damage and to hot-electron-induced damage of metal/SiO/sub 2//Si capacitors has been improved by using ultradry oxide. The ultradry oxide was grown in a double-walled quartz furnace in which water concentration was reduced to less than 1 p.p.m. The interface trap generation in ultradry MOS capacitors due to electron beams is nearly one order of magnitude smaller than that in conventional dry MOS capacitors. Interface trap generation in ultradry MOS capacitors caused by hot electrons is half of that in dry MOS capacitors.<>

Keywords

electron beam effects; hot carriers; interface electron states; metal-insulator-semiconductor structures; oxidation; radiation hardening (electronics); MOS capacitors; SiO/sub 2/-Si; double-walled quartz furnace; electron-beam irradiation; hardness; hot-electron injection; interface trap generation; ultradry oxidation; Electron beams; Electron traps; Furnaces; Lithography; MOS capacitors; Oxidation; Secondary generated hot electron injection; Silicon; Temperature; Very large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31671

Filename

31671