Title :
Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz
Author :
Nottenburg, Richard N. ; Chen, Y.K. ; Panish, Morton B. ; Humphrey, D.A. ; Hamm, R.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
A hot-electron InGaAs/InP heterostructure bipolar transistor (HBT) is discussed. A unity-current-gain cutoff frequency of 110 GHz and a maximum frequency of oscillation of 58 GHz are realized in transistors with 3.2*3.2- mu m/sup 2/ emitter size. Nonequilibrium electron transport, with an average electron velocity approaching 4*10/sup 7/ cm/s through the thin (650 AA) heavily doped (p=5*10/sup 19/ cm/sup -3/) InGaAs base and 3000-AA-wide collector space-charge region, results in a transit delay of 0.5 ps corresponding to an intrinsic cutoff frequency of 318 GHz.<>
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; hot electron transistors; indium compounds; solid-state microwave devices; 0.5 ps; 110 GHz; 318 GHz; 58 GHz; HBT; InGaAs-InP hot electron heterostructure bipolar transistor; collector space-charge region; electron velocity; intrinsic cutoff frequency; maximum frequency of oscillation; nonequilibrium electron transport; transit delay; unity-current-gain cutoff frequency; Bipolar transistors; Cutoff frequency; Delay; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Lattices; Spontaneous emission;
Journal_Title :
Electron Device Letters, IEEE
