High-speed performance of Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

Author

Won, T. ; Morkoç, Handis

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA

Volume

10

Issue

1

fYear

1989

Firstpage

33

Lastpage

35

Abstract

A theoretical investigation of Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors (HBTs) undertaken in an attempt to determine their speed potential is discussed. The analysis is based on a compact transistor model, and devices with self-aligned geometry, including both extrinsic and intrinsic parameters, are considered. For an emitter area of 1*5 mu m/sup 2/, an f/sub t/ of over 75 GHz and f/sub max/ of over 35 GHz were computed at a collector current density of 1*10/sup 5/ A/cm/sup 2/ and V/sub CB/ of 5 V.<>

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; silicon; HBTs; Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors; collector current density; compact transistor model; cutoff frequency; emitter area; high speed performance; maximum frequency of oscillation; self-aligned geometry; Doping; Gallium arsenide; Germanium alloys; Heterojunction bipolar transistors; Impurities; Phonons; Photonic band gap; Scattering; Silicon alloys; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31673

Filename

31673