Method for simultaneous measurement of diffusivity lifetime, and diffusion length, with application to heavily doped silicon

Author

Misiakos, Konstantinos ; Wang, Chin Hsin ; Neugroschel, Arnost

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

10

Issue

3

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

111

Lastpage

113

Abstract

A novel experimental method is presented and demonstrated that allows simultaneous determination of minority-carrier diffusivity, lifetime, and diffusion length in semiconductors. This method is based on the lateral collection of photogenerated carriers by a semi-infinite junction. The semi-infinite nature of the problem makes possible the use of closed-form expressions that greatly simplify the analysis of the experimental results. The main advantages of this method are its analytical simplicity and the self-consistency test provided by the simultaneous measurement of all three transport parameters. The effects of the lifetime and the diffusion coefficient are separated by varying the distance between the illumination edge and the collecting junction. Results of measurements for heavily doped n/sup +/ silicon with doping density of 2.4*10/sup 19/ cm/sup -3/ are demonstrated.<>

Keywords

carrier lifetime; diffusion in solids; elemental semiconductors; minority carriers; silicon; Si; closed-form expressions; collecting junction; diffusion length; diffusivity lifetime; heavily-doped semiconductors; illumination edge; minority-carrier; n/sup +/ semiconductors; photogenerated carriers; self-consistency test; semi-infinite junction; transport parameters; Automatic testing; Closed-form solution; Density measurement; Doping; Geometry; Length measurement; Photoconductivity; Photodiodes; Silicon; Transient analysis;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31685

Filename

31685