Title :
W-band divide-by-3 frequency divider using 0.1 μm InAlAs/InGaAs metamorphic HEMT technology
Author :
Jeong, J. ; Kim, S. ; Choi, W. ; Noh, H. ; Lee, K. ; Seo, K.-S. ; Kwon, Y.
Author_Institution :
Seoul Nat. Univ., South Korea
Abstract :
A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 μm GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW.
Keywords :
HEMT circuits; III-V semiconductors; aluminium compounds; frequency dividers; gallium arsenide; indium compounds; injection locked oscillators; millimetre wave mixers; millimetre wave oscillators; 0.1 micron; 12 mW; 56 to 100 GHz; 6.1 GHz; InAlAs-InGaAs; W-band divide-by-3 frequency divider; cascode FET; harmonic injection-locking; metamorphic HEMT technology; self-oscillating second-harmonic mixer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20052191
