DocumentCode
1163903
Title
W-band divide-by-3 frequency divider using 0.1 μm InAlAs/InGaAs metamorphic HEMT technology
Author
Jeong, J. ; Kim, S. ; Choi, W. ; Noh, H. ; Lee, K. ; Seo, K.-S. ; Kwon, Y.
Author_Institution
Seoul Nat. Univ., South Korea
Volume
41
Issue
18
fYear
2005
Firstpage
1005
Lastpage
1006
Abstract
A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 μm GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW.
Keywords
HEMT circuits; III-V semiconductors; aluminium compounds; frequency dividers; gallium arsenide; indium compounds; injection locked oscillators; millimetre wave mixers; millimetre wave oscillators; 0.1 micron; 12 mW; 56 to 100 GHz; 6.1 GHz; InAlAs-InGaAs; W-band divide-by-3 frequency divider; cascode FET; harmonic injection-locking; metamorphic HEMT technology; self-oscillating second-harmonic mixer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20052191
Filename
1507063
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