Title :
Reduction of propagation loss in silica-on-silicon channel waveguides formed by electron beam irradiation
Author :
Syms, Richard R. A. ; Tate, T.J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London
fDate :
9/1/1994 12:00:00 AM
Abstract :
Low loss is demonstrated at infrared wavelengths in channel guides formed by electron beam irradiation of SiO2 layers on Si substrates. By comparing materials from different PECVD processes, it is shown that substrate losses may largely be eliminated by using a suitable SiO2 thickness, and that extrinsic absorption caused by hydrogen contamination may be reduced by annealing before irradiation. The effectiveness of annealing depends strongly on the original material composition
Keywords :
annealing; electron beam effects; optical losses; optical waveguides; optical workshop techniques; plasma CVD; silicon; silicon compounds; PECVD processes; Si; SiO2-Si; annealing; electron beam irradiation; extrinsic absorption; infrared wavelengths; propagation loss; silica-on-silicon channel waveguides; substrate losses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941021
