DocumentCode :
1164096
Title :
Time-Dependent Dielectric Breakdown of 
-Doped High- 
/Metal Gate
Author :
Han, In-Shik ; Choi, Won-Ho ; Kwon, Hyuk-Min ; Na, Min-Ki ; Zhang, Ying-Ying ; Kim, Yong-Goo ; Wang, Jin-Suk ; Kang, Chang Yong ; Bersuker, Gennadi ; Lee, Byoung Hun ; Jeong, Yoon Ha ; Lee, Hi-Deok ; Jammy, Raj
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon
Volume :
30
Issue :
3
fYear :
2009
fDate :
3/1/2009 12:00:00 AM
Firstpage :
298
Lastpage :
301
Abstract :
Time-dependent dielectric breakdown (TDDB) characteristics of La2O3-doped high-k dielectric in Hf-based high-k/TaN metal gate stack were studied. Unlike the abrupt breakdown in the conventional SiO2 , dielectric breakdown behaviors of La-incorporated HfON and HfSiON dielectrics show progressive breakdown characteristics. Moreover, the extracted Weibull slope beta of breakdown distribution is in the range of 0.87-1.19, and it is independent on capacitor areas and stress conditions. Moreover, field dependence of TBD and stress-induced leakage current strongly suggest that the E-model is more applicable to explain in TDDB of La-incorporated high-k dielectric in Hf-based high-k/metal gate stack structure.
Keywords :
MOSFET; Weibull distribution; electric breakdown; hafnium compounds; high-k dielectric thin films; lanthanum compounds; tantalum compounds; E -model; Hf-TaN; HfON:La2O3; HfSiON:La2O3; Weibull slope; high-k/metal gate stacked NMOSFET; time dependent dielectric breakdown; BTI; Lanthanide Oxide $(hbox{La}_{2}hbox{O}_{3})$ $k$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2012272
Filename :
4785177
Link To Document :
