Title :
Extremely small active stripe laser diodes (EXSAS-LDs) for 17 channel low threshold array
Author :
Kitamura, S. ; Sasaki, T. ; Komatsu, Kazuhiko ; Kitamura, Masayuki
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki
fDate :
9/1/1994 12:00:00 AM
Abstract :
A uniform 17-channel array of low-threshold (3.5 mA, average) 1.3 μm-wavelength lasers was realised with submicrometre-wide bulk active stripes grown by selective MOVPE
Keywords :
semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; 1.3 micron; 17-channel array; 3.5 mA; EXSAS-LDs; InGaAsP-InP; InP; extremely small active stripe laser diodes; low-threshold; selective MOVPE growth; submicrometre-wide bulk active stripes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941046
