Title :
MOSTSM: a physically based charge conservative MOSFET model
Author :
Masuda, Hiroo ; Aoki, Yukio ; Mano, Jun´Ichi ; Yamashiro, Osamu
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
Charge-conservative CV models for the MOSFET can be classified into two categories: a depletion charge model, which is accurate but complex, and a simplified charge model, which is less accurate but is very simple. The accuracy of the latter model is investigated. The model error of C/sub BD/ and C/sub BS/ is found to be between 10 and 26 percent even in a long-channel MOSFET. The model of the bulk charge Q/sub B/ causes this error. A simple but accurate model for C/sub BD/ and C/sub BS/ is found, and a model named MOSTSM is developed. The model accuracy for a 0.8- mu m nMOSFET is investigated. CV model error is found to be less than 10%. This model has been implemented in a circuit simulator.<>
Keywords :
insulated gate field effect transistors; semiconductor device models; 0.8 micron; CV models; bulk charge; circuit simulator; depletion charge model; model accuracy; physically based charge conservative MOSFET model; simplified charge model; Capacitance; Circuit simulation; Circuit synthesis; Laboratories; Large scale integration; MOSFET circuits; Numerical simulation; Polynomials; Very large scale integration; Voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
