Title :
High-transconductance insulating-gate InP/InGaAs buried p-buffer DH-MODFETs grown by MOVPE
Author :
Chen, Young-Kai ; Temkin, Henry ; Tanbun-Ek, T. ; Logan, Ralph A. ; Nottenburg, Richard N.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
4/1/1989 12:00:00 AM
Abstract :
Buried p-buffer double heterostructure modulation-doped field-effect transistors (BP DH-MODFETs) with an InGaAs quantum-well channel were fabricated with high transconductance and good breakdown voltage, by placing the metal gate directly on Fe-doped InP insulating layer. Excellent extrinsic DC transconductance of 560 mS/mm and a high gate-to-drain diode breakdown voltage (greater than 20 V) were achieved at room temperature with FETs of 1.2- mu m gate length. Unity currently gain cutoff frequency f/sub T/ of 24 GHz and maximum oscillation frequency f/sub max/ of 60 GHz were demonstrated for a drain to source voltage V/sub DS/=4 V, which corresponds to an average electron velocity of 2.2*10/sup 7/ cm/s in the quantum well.<>
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 1.2 micron; 20 V; 24 GHz; 560 mS; 60 GHz; InP-InGaAs; InP:Fe; MOVPE; average electron velocity; breakdown voltage; buried p-buffer DH MODFET; drain to source voltage; extrinsic DC transconductance; gate length; high transconductance; maximum oscillation frequency; quantum-well channel; unity current gain cutoff frequency; Cutoff frequency; Diodes; Double-gate FETs; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Insulation; Quantum wells; Temperature; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
