On the Possibility of Tunable-Gap Bilayer Graphene FET

We explore the device potential of a tunable-gap bilayer graphene (BG) FET exploiting the possibility of opening a bandgap in BG by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic simulations based on the self-consistent solution of the Poisson and Schrodinger equations within the nonequilibrium Green´s function formalism. We show that the concept works, but the bandgap opening is not strong enough to suppress band-to-band tunneling in order to obtain a sufficiently large I_on/I_off ratio for CMOS device operation.