Thermal oxidation of AlGaAs: modeling and process control

Author

Ku, Pei-Cheng ; Chang-Hasnain, Connie J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA

Volume

39

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

577

Lastpage

585

Abstract

A simple physical model is developed for the thermal oxidation process of AlGaAs using the continuity equation. The model is based on the principle of oxidant mass conservation. Theoretical calculations are compared with experimental data to a good agreement. The model is then applied to the study of VCSEL batch fabrication. Several control parameters are discussed including AlGaAs layer thickness, aluminum composition, initial mesa size, spacing between two adjacent devices, oxidation time, and oxidation temperature.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical control; optical fabrication; oxidation; process control; semiconductor process modelling; surface emitting lasers; AlGaAs; AlGaAs layer thickness; AlO_x; VCSEL batch fabrication; aluminum composition; continuity equation; control parameters; initial mesa size; modeling; oxidant mass conservation; oxidation temperature; oxidation time; process control; simple physical model; spacing; thermal oxidation; Aluminum; Calibration; Equations; Laser modes; Optical device fabrication; Oxidation; Process control; Semiconductor process modeling; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2003.809340

Filename

1188760