Title :
60-GHz pseudomorphic-MODFET low-noise MMIC amplifiers
Author :
Metze, G.M. ; Cornfeld, A. ; Carlson, E. ; Dahrooge, G. ; Chang, E. ; Singer, J. ; Bass, J. ; Hung, Hing-Loi ; Lee, Timothy
Author_Institution :
COMSAT Labs., Clarksburg, MD, USA
fDate :
4/1/1989 12:00:00 AM
Abstract :
The development of V-band low-noise monolithic microwave integrated circuits (MMICs) based on pseudomorphic modulation-doped FETs (P-MODFETs) is presented. These dual-stage MMICs incorporate P-MODFETs, with 0.35- mu m*60- mu m gates, as the active elements, electron-beam-written tuning elements, and DC-blocking and bias networks. The dual-stage chips exhibited a maximum gain of 10.2 dB at 59.5 GHz and a minimum noise figure of 5.3 dB, with an associated gain of 8.2 dB at 58.2 GHz. A cascaded four-stage amplifier using two MMIC modules exhibited 5.8-dB minimum noise figure with an associated gain of 18.3 dB at 58 GHz and up to 21.1 dB of maximum gain.<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; 10.2 dB; 18.3 dB; 21.1 dB; 5.3 dB; 5.8 dB; 58.2 GHz; 59.5 GHz; 60 GHz; 8.2 dB; DC blocking networks; V-band MMIC; bias networks; cascaded four-stage amplifier; dual-stage MMICs; electron-beam-written tuning elements; maximum gain; minimum noise figure; pseudomorphic-MODFET low-noise MMIC amplifiers; Fabrication; Gain; Gallium arsenide; HEMTs; Low-noise amplifiers; MESFET circuits; MMICs; MODFETs; Molecular beam epitaxial growth; Noise figure;
Journal_Title :
Electron Device Letters, IEEE
