• DocumentCode
    1164337
  • Title

    High-Voltage nLDMOS in Waffle-Layout Style With Body-Injected Technique for ESD Protection

  • Author

    Chen, Wen-Yi ; Ker, Ming-Dou

  • Author_Institution
    Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu
  • Volume
    30
  • Issue
    4
  • fYear
    2009
  • fDate
    4/1/2009 12:00:00 AM
  • Firstpage
    389
  • Lastpage
    391
  • Abstract
    Electrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly increased in this letter through the waffle-layout style with body-current injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-mum 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (It2) of nLDMOS has a more than 2x increase by the body-current injection.
  • Keywords
    CMOS integrated circuits; electric breakdown; electrostatic discharge; ESD; bipolar CMOS DMOS process; body-current injection; body-injected technique; electrostatic discharge; n-channel lateral DMOS; secondary breakdown current; waffle-layout style; Bipolar CMOS DMOS (BCD) process; body-current injection; electrostatic discharge (ESD); lateral DMOS (LDMOS);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2013368
  • Filename
    4785202
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1164337