• DocumentCode
    1164448
  • Title

    Demonstration of direct bonding between InP and gadolinium gallium garnet (Gd3Ga5O12) substrates

  • Author

    Mizumoto, Tetsuya ; Maru, K. ; Naito, Yuta

  • Volume
    30
  • Issue
    18
  • fYear
    1994
  • fDate
    9/1/1994 12:00:00 AM
  • Firstpage
    1534
  • Lastpage
    1536
  • Abstract
    The authors demonstrate the direct bonding of InP/Gd3Ga 5O12 (GGG) and InP/GaInSb on GGG without glue. After chemical treatment, heat treatment was applied in an H2 atmosphere without a weight. This technique makes feasible the integration of semiconductor and magneto-optic devices
  • Keywords
    III-V semiconductors; gadolinium compounds; garnets; heat treatment; indium compounds; integrated optoelectronics; magneto-optical devices; surface treatment; wafer bonding; GGG substrates; Gd3Ga5O12; H2; H2 atmosphere; InP; InP-GaInSb; InP-GdGG; InP-GdGa5O12; chemical treatment; direct bonding; heat treatment; integration; magneto-optic devices; semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941031
  • Filename
    317062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1164448