Title :
High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer
Author :
Wu, C.L. ; Hsu, W.C. ; Tsai, M.S. ; Shieh, H.M.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
fDate :
9/1/1994 12:00:00 AM
Abstract :
A three-terminal δ-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability
Keywords :
III-V semiconductors; chemical vapour deposition; field effect transistors; gallium arsenide; hot electron transistors; negative resistance; semiconductor doping; semiconductor growth; GaAs; charge injection; fabrication; growth; low-pressure metal organic chemical vapour deposition; peak-to-valley current ratio; power handling; real-space transfer; three-terminal δ-doped GaAs negative resistance field-effect transistor; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941028
