Title :
Improvement of radiation hardness in poly-Si gate MOS capacitor by use of amorphous Si
Author :
Chang-Liao, Kuei-Shu ; Chuang, C.-C.
Author_Institution :
Dept. of Nucl. Eng., Nat. Tsing Hua Univ., Hsinchu
fDate :
9/1/1994 12:00:00 AM
Abstract :
A poly-Si gate electrode formed by amorphous-Si film is proposed and demonstrated to improve the radiation hardness in MOS capacitors. The improvement of radiation hardness is due to the increase of compressive stress in the oxide. As little change in the device fabrication process is required, it should be useful in practice
Keywords :
amorphous semiconductors; capacitors; elemental semiconductors; internal stresses; metal-insulator-semiconductor devices; radiation hardening (electronics); silicon; MOS capacitor; Si-SiO2; amorphous-Si film; compressive stress; device fabrication; oxide; poly-Si gate electrode; radiation hardness;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941035
