• DocumentCode
    1164486
  • Title

    Improvement of radiation hardness in poly-Si gate MOS capacitor by use of amorphous Si

  • Author

    Chang-Liao, Kuei-Shu ; Chuang, C.-C.

  • Author_Institution
    Dept. of Nucl. Eng., Nat. Tsing Hua Univ., Hsinchu
  • Volume
    30
  • Issue
    18
  • fYear
    1994
  • fDate
    9/1/1994 12:00:00 AM
  • Firstpage
    1540
  • Lastpage
    1542
  • Abstract
    A poly-Si gate electrode formed by amorphous-Si film is proposed and demonstrated to improve the radiation hardness in MOS capacitors. The improvement of radiation hardness is due to the increase of compressive stress in the oxide. As little change in the device fabrication process is required, it should be useful in practice
  • Keywords
    amorphous semiconductors; capacitors; elemental semiconductors; internal stresses; metal-insulator-semiconductor devices; radiation hardening (electronics); silicon; MOS capacitor; Si-SiO2; amorphous-Si film; compressive stress; device fabrication; oxide; poly-Si gate electrode; radiation hardness;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941035
  • Filename
    317066
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1164486