Title :
Reducing excessive journaling overhead in mobile devices with small-sized NVRAM
Author :
Junghoon Kim ; Changwoo Min ; Young Ik Eom
Author_Institution :
Sungkyunkwan Univ., Suwon, South Korea
Abstract :
The excessive journaling degrades the performance and shortens the lifetime of NAND flash storage in mobile devices. We propose a novel journaling scheme that resolves this problem by using small-sized NVRAM efficiently. Experimental results show that our proposed scheme outperforms EXT4 by up to 16.8 times for synthetic workloads. Also, for TPC-C SQLite benchmark, it enhances the transaction throughput by 20% and reduces the number of journal writes by 58% with only 16 MB NVRAM.
Keywords :
NAND circuits; flash memories; mobile handsets; random-access storage; NAND flash storage lifetime; TPC-C SQLite benchmark; journaling overhead reduction; journaling scheme; memory size 16 MByte; mobile devices; small-sized NVRAM; transaction throughput; Ash; Benchmark testing; Nonvolatile memory; Performance evaluation; Random access memory; Smart phones;
Conference_Titel :
Consumer Electronics (ICCE), 2014 IEEE International Conference on
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4799-1290-2
DOI :
10.1109/ICCE.2014.6775890