DocumentCode
116450
Title
Reducing excessive journaling overhead in mobile devices with small-sized NVRAM
Author
Junghoon Kim ; Changwoo Min ; Young Ik Eom
Author_Institution
Sungkyunkwan Univ., Suwon, South Korea
fYear
2014
fDate
10-13 Jan. 2014
Firstpage
19
Lastpage
20
Abstract
The excessive journaling degrades the performance and shortens the lifetime of NAND flash storage in mobile devices. We propose a novel journaling scheme that resolves this problem by using small-sized NVRAM efficiently. Experimental results show that our proposed scheme outperforms EXT4 by up to 16.8 times for synthetic workloads. Also, for TPC-C SQLite benchmark, it enhances the transaction throughput by 20% and reduces the number of journal writes by 58% with only 16 MB NVRAM.
Keywords
NAND circuits; flash memories; mobile handsets; random-access storage; NAND flash storage lifetime; TPC-C SQLite benchmark; journaling overhead reduction; journaling scheme; memory size 16 MByte; mobile devices; small-sized NVRAM; transaction throughput; Ash; Benchmark testing; Nonvolatile memory; Performance evaluation; Random access memory; Smart phones;
fLanguage
English
Publisher
ieee
Conference_Titel
Consumer Electronics (ICCE), 2014 IEEE International Conference on
Conference_Location
Las Vegas, NV
ISSN
2158-3994
Print_ISBN
978-1-4799-1290-2
Type
conf
DOI
10.1109/ICCE.2014.6775890
Filename
6775890
Link To Document