Title :
P+-P-P+ pseudo-bipolar lateral SOI transistor
Author :
Colinge, J.P. ; Flandre, Denis ; De Ceuster, D.
Author_Institution :
Maxwell-DICE, Univ. Catholique de Louvain
fDate :
9/1/1994 12:00:00 AM
Abstract :
Lateral P+-P-P+ SOI transistors functioning in the hybrid mode (i.e. with body connected to gate) have been tested. Although current transport is solely due to holes, these devices exhibit electrical characteristics which are similar to those of a bipolar transistor. A common-emitter current gain of 1400 is observed in devices having an effective channel (base) length of 1.1 μm
Keywords :
bipolar transistors; semiconductor-insulator boundaries; 1.1 micron; P+-P-P+ pseudo-bipolar lateral SOI transistor; Si; common-emitter current gain; current transport; effective channel length; electrical characteristics; hole transport; hybrid mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941040
