Nanoscale Resistive Switching of a Copper–Carbon-Mixed Layer for Nonvolatile Memory Applications

Author

Choi, Hyejung ; Pyun, Myeongbum ; Kim, Tae-Wook ; Hasan, Musarrat ; Dong, Rui ; Lee, Joonmyoung ; Park, Ju-Bong ; Yoon, Jaesik ; Seong, Dong-jun ; Lee, Takhee ; Hwang, Hyunsang

Author_Institution

Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju

Volume

30

Issue

3

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

302

Lastpage

304

Abstract

The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow distribution of set and reset voltages in the nanoscale junction. In addition, we investigated the area dependence of operation current. Based on these results and current-voltage dependence on temperature, we discussed a potential switching mechanism of Cu-C layer.

Keywords

carbon; copper; random-access storage; Cu-C; cross-point cell array; current-voltage dependence; nanoscale resistive switching; narrow distribution; nonvolatile memory applications; potential switching mechanism; stable resistance switching; typical filament switching; Cell array; copper–carbon-mixed (Cu–C) layer; resistance random access memory; resistive switching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2012273

Filename

4785231