Title :
Nanoscale Resistive Switching of a Copper–Carbon-Mixed Layer for Nonvolatile Memory Applications
Author :
Choi, Hyejung ; Pyun, Myeongbum ; Kim, Tae-Wook ; Hasan, Musarrat ; Dong, Rui ; Lee, Joonmyoung ; Park, Ju-Bong ; Yoon, Jaesik ; Seong, Dong-jun ; Lee, Takhee ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju
fDate :
3/1/2009 12:00:00 AM
Abstract :
The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow distribution of set and reset voltages in the nanoscale junction. In addition, we investigated the area dependence of operation current. Based on these results and current-voltage dependence on temperature, we discussed a potential switching mechanism of Cu-C layer.
Keywords :
carbon; copper; random-access storage; Cu-C; cross-point cell array; current-voltage dependence; nanoscale resistive switching; narrow distribution; nonvolatile memory applications; potential switching mechanism; stable resistance switching; typical filament switching; Cell array; copper–carbon-mixed (Cu–C) layer; resistance random access memory; resistive switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2012273
