Title :
Hot-electron-induced photon energies in n-channel MOSFETs operating at 77 and 300 K
Author :
Lanzoni, Massimo ; Manfredi, M. ; Selmi, L. ; Sangiorgi, Enrico ; Capelletti, R. ; Riccò, Bruno
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
fDate :
5/1/1989 12:00:00 AM
Abstract :
A detailed experimental study of the spectral distribution of hot-electron-induced photon emission in n-channel MOSFETs is presented. The study significantly improves on previous work by considering energies up to 3.1 eV and different operating temperatures. It is shown that in contrast with previous results, the photon energy distribution is markedly non-Maxwellian, thus suggesting that the same is true for the energy distribution of the channel electrons.<>
Keywords :
electroluminescence; hot carriers; insulated gate field effect transistors; semiconductor device testing; 300 K; 77 K; channel electron energy distribution; hot-electron-induced photon emission; n-channel MOSFETs; nonMaxwellian distribution; operating temperatures; photon energy distribution; spectral distribution; Boltzmann equation; Energy measurement; Impact ionization; MOSFETs; Optical devices; Physics; Probability distribution; Resistance heating; Secondary generated hot electron injection; Temperature distribution;
Journal_Title :
Electron Device Letters, IEEE
