Title :
Enhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate
Author :
Liu, Y. ; Egawa, T. ; Jiang, H.
Author_Institution :
Res. Center for Nano-Devices & Syst., Nagoya Inst. of Technol., Showa-Ku Nagoya, Japan
fDate :
7/20/2006 12:00:00 AM
Abstract :
A non-recessed-gate enhancement-mode HEMT was fabricated on an undoped quaternary AlInGaN/GaN heterostructure with a thin barrier AlInGaN layer. The maximum drain current of 252 mA/mm and peak transconductance of 175 mS/mm were obtained on a 2 μm-length-gate HEMT with a large threshold voltage of 0.57 V. The enhancement-mode operation was observed in a large source-drain voltage range up to 40 V. The results imply that AlInGaN is a promising candidate for high power and high frequency applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; power HEMT; wide band gap semiconductors; AlInGaN-GaN; enhancement-mode quaternary AlInGaN/GaN HEMT; heterostructure; high frequency applications; high power applications; maximum drain current; nonrecessed-gate; peak transconductance; sapphire substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061150
