IPEL-a novel ion-implanted electrically programmable element

Author

Shacham-Diamand, Yosi ; Sinar, Alex ; Sirkin, Eric ; Blech, Ilan ; Gerzberg, Levy

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

10

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

180

Lastpage

182

Abstract

The programmable element consists of a metal/amorphous-silicon/crystalline-silicon structure in which the amorphous-silicon layer is created by high-dose ion implantation. Amorphization by the damage caused by the collisions of the energetic ions with the substrate increases resistivity of a normal contact to single-crystal silicon by many orders of magnitude. The specific resistance of a typical aluminum contact to heavily doped n-type silicon increases from 10/sup -6/-10/sup -5/ to 1-10 Omega -cm/sup 2/ at room temperature. Applying a sufficiently high voltage induces an irreversible transformation of the device into a low-resistance state. The postprogramming resistance can be as low as 100 Omega for a 3*3- mu m/sup 2/ contact at room temperature.<>

Keywords

CMOS integrated circuits; EPROM; contact resistance; integrated circuit technology; integrated memory circuits; ion implantation; 100 ohm; Al-Si; CMOS process integration; EPROM; IPEL; Si substrate; amorphisation; electrically programmable element; energetic ion collisions; high-dose ion implantation; irreversible transformation; low-resistance state; postprogramming resistance; specific resistance; Amorphous materials; Conductivity; Contact resistance; Crystallization; Implants; Ion implantation; Silicon; Substrates; Temperature dependence; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31713

Filename

31713