Superconductive magnetoelectric field-effect transistor

Author

Hsiang, Thomas Y. ; Sobolewski, Roman

Author_Institution

Dept. of Electr. Eng., Rochester Univ., NY, USA

Volume

10

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

183

Lastpage

185

Abstract

A transistor-like three-terminal superconducting device-the superconductive magnetoelectric field-effect transistor (SMET)-is described. The SMET represents a field-controlled Josephson device with its control based on the magnetoelectric effect. The device is characterized by a very high input-output isolation because the input is strictly voltage-controlled. As such, it may be useful for interconnecting voltage-controlled semiconductor electronics with current-controlled superconducting devices. The design considerations are reviewed, and preliminary experimental results are presented. Possible other practical applications are also discussed.<>

Keywords

Josephson effect; field effect transistors; magnetoelectric effects; superconducting junction devices; current-controlled superconducting devices; design considerations; field-controlled Josephson device; high input-output isolation; magnetoelectric effect; superconductive magnetoelectric field-effect transistor; three-terminal superconducting device; voltage-controlled semiconductor electronics; FETs; Josephson junctions; Magnetic devices; Magnetic flux; Magnetic materials; Magnetoelectric effects; Superconducting devices; Superconducting magnets; Superconductivity; Tensile stress;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31714

Filename

31714