DocumentCode :
1165002
Title :
Superconductive magnetoelectric field-effect transistor
Author :
Hsiang, Thomas Y. ; Sobolewski, Roman
Author_Institution :
Dept. of Electr. Eng., Rochester Univ., NY, USA
Volume :
10
Issue :
5
fYear :
1989
fDate :
5/1/1989 12:00:00 AM
Firstpage :
183
Lastpage :
185
Abstract :
A transistor-like three-terminal superconducting device-the superconductive magnetoelectric field-effect transistor (SMET)-is described. The SMET represents a field-controlled Josephson device with its control based on the magnetoelectric effect. The device is characterized by a very high input-output isolation because the input is strictly voltage-controlled. As such, it may be useful for interconnecting voltage-controlled semiconductor electronics with current-controlled superconducting devices. The design considerations are reviewed, and preliminary experimental results are presented. Possible other practical applications are also discussed.<>
Keywords :
Josephson effect; field effect transistors; magnetoelectric effects; superconducting junction devices; current-controlled superconducting devices; design considerations; field-controlled Josephson device; high input-output isolation; magnetoelectric effect; superconductive magnetoelectric field-effect transistor; three-terminal superconducting device; voltage-controlled semiconductor electronics; FETs; Josephson junctions; Magnetic devices; Magnetic flux; Magnetic materials; Magnetoelectric effects; Superconducting devices; Superconducting magnets; Superconductivity; Tensile stress;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.31714
Filename :
31714
Link To Document :
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