0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

Author

Wang, G.W. ; Feng, Milton ; Lau, C.L. ; Ito, C. ; Lepkowski, Thomas R.

Author_Institution

Ford Microelectron. Inc., Colorado Springs, CO, USA

Volume

10

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

186

Lastpage

188

Abstract

Quarter-micrometer gated ion-implanted GaAs MESFETs which demonstrate device performance comparable to AlGaAs/InGaAs pseudomorphic HEMTs (high-electron mobility transistors) have been successfully fabricated on 3-in-diameter GaAs substrates. The MESFETs show a peak extrinsic transconductance of 480 mS/mm with a high channel current of 720 mA/mm. From S-parameter measurements, the MESFETs show a peak current-gain cutoff frequency f/sub t/ of 68 GHz with an average f/sub t/ of 62 GHz across the wafer. The 0.25- mu m gate MESFETs also exhibit a maximum-available-gain cutoff frequency f/sub t/ greater than 100 GHz. These results are the first demonstration of potential volume production of high-performance ion-implanted MESFETs for millimeter-wave application.<>

Keywords

III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; ion implantation; solid-state microwave devices; 0.25 micron; 100 GHz; 480 mS; 62 GHz; 68 GHz; GaAs; GaAs substrate; MM-wave MESFET; S-parameter measurements; extrinsic transconductance; gate width; high channel current; ion-implanted MESFETs; maximum-available-gain cutoff frequency; peak current-gain cutoff frequency; Current measurement; Cutoff frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; MESFETs; MODFETs; Millimeter wave transistors; PHEMTs; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31715

Filename

31715