Title :
Improved transconductance under high normal field MOSFETs with ultrathin nitrided oxides
Author :
Hori, Takashi ; Iwasaki, Hiroshi
Author_Institution :
Matsushita Electr. Ind. Co., Osaka, Japan
fDate :
5/1/1989 12:00:00 AM
Abstract :
The gate-voltage dependence of electron mobility at 298 and 82 K in MOSFETs with nanometer-range thin (reoxidized) nitrided oxides prepared by rapid thermal processing (RTP) at 900-1150 degrees C for 15-300 s is discussed. Rapid nitridation improves the mobility and current derivability under high normal field over thermally grown oxides at both temperatures: the transconductance g/sub m/ at a gate drive of 3.5 V is improved by half an order of magnitude, whereas the peak g/sub m/ remains comparable to that of an oxide. Nitridation also avoids the negative g/sub m/ observed at 82 K for an oxide MOSFET. These improvements are substantially unchanged by additional reoxidations.<>
Keywords :
carrier mobility; electric admittance; incoherent light annealing; insulated gate field effect transistors; semiconductor technology; surface treatment; 15 to 300 s; 298 K; 82 K; 900 to 1150 degC; MOSFETs; current derivability; electron mobility; gate-voltage dependence; high normal field; rapid nitridation; rapid thermal processing; transconductance; ultrathin nitrided oxides; Dielectric substrates; Electron mobility; MOSFETs; Oxidation; Pollution measurement; Rapid thermal annealing; Rapid thermal processing; Thermal degradation; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
