Gate current in OFF-state MOSFET

Author

Chen, Jian ; Chan, Tung-Yi ; Ko, Ping Keung ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

10

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

203

Lastpage

205

Abstract

The source of the gate current in MOSFETs due to an applied drain voltage with the gate grounded is studied. It is found that for 100-AA or thinner oxide, the gate current is due to Fowler-Nordheim (F-N) tunneling electrons from the gate. With increasing oxide thickness, hot-hole injection becomes the dominant contribution to the gate current. This gate current can cause I/sub D/ walkout, which is a decrease in the gate-induced drain leakage current, and hole trapping, which becomes important for device degradation study. It can also be used to advantage in EPROM (erasable programmable read-only memory) erasure.<>

Keywords

EPROM; hole traps; hot carriers; insulated gate field effect transistors; leakage currents; tunnelling; EPROM erasure; Fowler Nordheim tunnelling electrons; MOSFETs; applied drain voltage; gate current; gate-induced drain leakage current; hole trapping; hot-hole injection; off-state; oxide thickness; Acceleration; Capacitors; Charge carrier processes; Current measurement; Hot carriers; Length measurement; MOSFET circuits; Temperature; Thickness measurement; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31721

Filename

31721