Title :
Gate current in OFF-state MOSFET
Author :
Chen, Jian ; Chan, Tung-Yi ; Ko, Ping Keung ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
5/1/1989 12:00:00 AM
Abstract :
The source of the gate current in MOSFETs due to an applied drain voltage with the gate grounded is studied. It is found that for 100-AA or thinner oxide, the gate current is due to Fowler-Nordheim (F-N) tunneling electrons from the gate. With increasing oxide thickness, hot-hole injection becomes the dominant contribution to the gate current. This gate current can cause I/sub D/ walkout, which is a decrease in the gate-induced drain leakage current, and hole trapping, which becomes important for device degradation study. It can also be used to advantage in EPROM (erasable programmable read-only memory) erasure.<>
Keywords :
EPROM; hole traps; hot carriers; insulated gate field effect transistors; leakage currents; tunnelling; EPROM erasure; Fowler Nordheim tunnelling electrons; MOSFETs; applied drain voltage; gate current; gate-induced drain leakage current; hole trapping; hot-hole injection; off-state; oxide thickness; Acceleration; Capacitors; Charge carrier processes; Current measurement; Hot carriers; Length measurement; MOSFET circuits; Temperature; Thickness measurement; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
