Ultrahigh-frequency performance of submicrometer-gate ion-implanted GaAs MESFETs

Author

Wang, G.W. ; Feng, Milton ; Lau, C.L. ; Ito, C. ; Lepkowski, Thomas R.

Author_Institution

Ford Microelectron. Inc., Colorado Springs, CO, USA

Volume

10

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

206

Lastpage

208

Abstract

A study of the high-frequency performance of short-gate ion-implanted GaAs MESFETs with gate lengths of 0.3 and 0.5 mu m is discussed. Excellent DC and microwave performance have been achieved with an emphasis on the reduction of effective gate length during device fabrication. From f/sub t/ of 83 and 48 GHz for 0.3-0.5- mu m gate devices, respectively, an electron velocity of 1.5*10/sup 7/ cm/s is estimated. An f/sub t/ of 240 GHz is also projected for a 0.1- mu m-gate GaAs MESFET. These experimental results are believed to be comparable to those of the best HEMTs (high-electron-mobility transistors) reported and higher than those generally accepted for MESFETs.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; solid-state microwave devices; 0.3 micron; 0.5 micron; 240 GHz; 48 GHz; 83 GHz; DC performance; GaAs; MESFETs; electron velocity; gate lengths; ion implantation; microwave performance; submicrometer-gate; ultrahigh frequency performance; Annealing; Electrons; Etching; Fabrication; Gallium arsenide; Gold; Lithography; MESFETs; Microwave devices; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31722

Filename

31722