DocumentCode
1165092
Title
Analysis of a GaAs metal-semiconductor-metal (MSM) photodetector with 0.1- mu m finger spacing
Author
Koscielniak, Waclaw C. ; Littlejohn, Micheal A. ; Pelouard, Jean-Luc
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume
10
Issue
5
fYear
1989
fDate
5/1/1989 12:00:00 AM
Firstpage
209
Lastpage
211
Abstract
The temporal response of a GaAs metal-semiconductor-metal (MSM) photodetector with a finger spacing of 0.1 mu m is discussed. The intrinsic detector has a minor effect (25% increase) on the full width at half-maximum (FWHM) of the temporal response of the device and its parasitic circuit elements. The analysis indicates that a long time constant due to the decay of holes is solely responsible for this increase. The smallest FWHM for this detector is estimated to be less than 2.5 ps.<>
Keywords
III-V semiconductors; equivalent circuits; gallium arsenide; metal-semiconductor-metal structures; photodetectors; 0.1 micron; FWHM; GaAs; WSi/sub x/-GaAs; equivalent circuit; finger spacing; hole decay; metal semiconductor metal photodetector; parasitic circuit elements; temporal response; time constant; Circuits; Delay; Detectors; Doping profiles; Electrodes; Fingers; Gallium arsenide; Optical devices; Photodetectors; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.31723
Filename
31723
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