Title :
Microwave multiple-state resonant tunneling bipolar transistors
Author :
Lunardi, L.M. ; Sen, S. ; Capasso, F. ; Smith, P.R. ; Sivco, D.L. ; Cho, A.Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
5/1/1989 12:00:00 AM
Abstract :
Fabrication and microwave performance of a multiple-state resonant-tunneling bipolar transistor (RTBT) are presented. This transistor exhibits a maximum DC current gain of 60 at room temperature and a cutoff frequency of 24 GHz. Frequency multiplication by a factor of five has been demonstrated with a single transistor.<>
Keywords :
bipolar transistors; hot electron transistors; solid-state microwave devices; 24 GHz; Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As; DC current gain; cutoff frequency; frequency multiplication; microwave performance; multiple-state resonant tunneling bipolar transistors; Bipolar transistors; Circuits; Energy states; Frequency conversion; Microwave devices; Microwave transistors; Resonant tunneling devices; Temperature; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
